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APTM100UM65SCAVG
Single switch Series & SiC parallel diodes MOSFET Power Module
D
VDSS = 1000V RDSon = 65m typ @ Tj = 25C ID = 145A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
DK
G SK S
G, SK and DK terminals are for control signals only (not for power)
*
SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance - Symmetrical design - M5 power connectors - M3 power connectors High level of integration AlN substrate for improved MOSFET thermal performance
* * *
DK S D
* *
SK
G
All ratings @ Tj = 25C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM100UM65SCAVG - Rev 0
September, 2009
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
APTM100UM65SCAVG
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 1000 145 110 580 30 78 3250 30 50 3200 Unit V A V m W A mJ
Tc = 25C
Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 670V ID = 145A RG = 0.75 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75 Min Typ 28.5 5.08 0.9 1068 136 692 18 14 140 55 2.9 2.9 4.8 3.9 mJ mJ
September, 2009 2-8 APTM100UM65SCAVG - Rev 0
Max
Unit nF
nC
ns
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APTM100UM65SCAVG
Series diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C
Min 200
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
120 1.1 1.4 0.9 31 60 120 500
1.15 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
di/dt = 400A/s
SiC Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 120A Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 384 672 120 1.6 2.3 480 1152 828 Max 2400 12000 1.8 3.0 Unit V A A V nC pF
IF = 120A, VR = 600V di/dt =5000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode SiC Parallel diode 4000 -40 -40 -40 3 2 1 Min Typ Max 0.038 0.46 0.18 150 125 100 5 3.5 1.5 280 Unit C/W V C
September, 2009 3-8 APTM100UM65SCAVG - Rev 0
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque Package Weight For terminals M6 M5 M3
N.m g
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APTM100UM65SCAVG
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM100UM65SCAVG - Rev 0
September, 2009
APTM100UM65SCAVG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.5 0.3 0.9 0.7
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 320 ID, Drain Current (A) 280 240 200 160 120 80 40 0 0 5 10 15 20 25
5.5V 5V 6V VGS=15, 10V
Transfert Characteristics 480 ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V
400 320 240 160 80 0
TJ=125C
TJ=25C
30
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 72.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 120 80 40 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
80
160
240
320
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100UM65SCAVG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
100s VGS=10V ID=72.5A
TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.0 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A)
0.9
limited by RDSon
100
1ms
0.8
10
0.7
Single pulse TJ=150C TC=25C 1
10ms
0.6 25 50 75 100 125 TC, Case Temperature (C) 150
1 10 100 1000 VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0
Gate Charge vs Gate to Source Voltage ID=145A TJ=25C
VDS=200V VDS=500V VDS=800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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APTM100UM65SCAVG - Rev 0
September, 2009
0
300
600
900
1200
1500
APTM100UM65SCAVG
Delay Times vs Current 160 td(off) td(on) and td(off) (ns) 120
VDS=670V RG=0.75 TJ=125C L=100H
Rise and Fall times vs Current 100 80
VDS=670V RG=0.75 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 tr
80
40
td(on)
0 50 94 138 182 226 270 ID, Drain Current (A) Switching Energy vs Current
50
94
138 182 226 ID, Drain Current (A)
270
Switching Energy vs Gate Resistance 26 Switching Energy (mJ)
VDS=670V ID=145A TJ=125C L=100H
10
Switching Energy (mJ)
8 6 4 2 0 50
VDS=670V RG=0.75 TJ=125C L=100H
22 18 14 10 6 2
Eoff
Eon Eoff
Eon
94
138
182
226
270
0
1
2
3
4
5
6
7
8
ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 15 35 55 75 95 115 135 ID, Drain Current (A)
VDS=670V D=50% RG=0.75 TJ=125C TC=75C ZCS ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
100
TJ=150C TJ=25C
10
Hard switching
1 VSD, Source to Drain Voltage (V)
September, 2009 7-8 APTM100UM65SCAVG - Rev 0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
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APTM100UM65SCAVG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.9 0.16 0.7 0.12 0.08 0.04 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 1200 IR Reverse Current (A) 1050 900 750 600 450 300 150 0 400 600
TJ=125C TJ=175C TJ=25C TJ=75C
240
IF Forward Current (A)
180 120
TJ=75C
TJ=125C
60 0 0 0.5 1 1.5 2
TJ=175C
2.5
3
3.5
800
1000 1200 1400 1600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
VR Reverse Voltage (V)
8000 7000 C, Capacitance (pF) 6000 5000 4000 3000 2000 1000 0 1 10 100 VR Reverse Voltage 1000
September, 2009
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM100UM65SCAVG - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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